Semiconductor characterization techniques
Today, we want to delve into the fascinating world of Semiconductor characterization techniques. This topic is undoubtedly one of the most important and relevant today, since Semiconductor characterization techniques has a significant impact on different areas of our lives. From its influence on society, culture, politics and the economy, to its importance in our personal and professional lives, Semiconductor characterization techniques plays a crucial role in the way we understand and confront the world around us. Throughout this article, we will explore the different aspects and dimensions of Semiconductor characterization techniques, examining its impact and relevance in various contexts. We hope this exploration will give us a deeper and more complete understanding of Semiconductor characterization techniques, as well as a greater appreciation for its importance in our lives.
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.). Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
Electrical characterization techniques
Electrical characterization can be used to determine resistivity, carrier concentration, mobility, contact resistance, barrier height, depletion width, oxide charge, interface states, carrier lifetimes, and deep level impurities.
- Two-point probe
- Four-point probe
- Differential Hall effect
- Capacitance voltage profiling
- Deep-level transient spectroscopy (DLTS)
- Electron beam-induced current
- Drive-level capacitance profiling (DLCP)
- Current–voltage characteristic (I–V)
- Suns–VOC (Pseudo I–V)
- Photoconductance decay (PCD)
Optical characterization techniques
- Microscopy
- Ellipsometry
- Photoluminescence
- Electroluminescence
- Absorption or transmission spectroscopy
- Raman spectroscopy
- Fourier-transform infrared spectroscopy
- Reflectance modulation
- Cathodoluminescence
Physical and chemical characterization techniques
- Electron beam techniques
- Scanning Electron Microscopy (SEM)
- Transmission Electron Microscopy (TEM)
- Auger electron spectroscopy (AES)
- Electron microprobe (EMP)
- Electron energy loss spectroscopy (EELS)
- Ion beam techniques
- X-ray techniques
- X-ray fluorescence (XRF)
- X-ray photoelectron spectroscopy (XPS)
- X-ray diffraction (XRD)
- X-ray topography
- Neutron activation analysis (NAA)
- Chemical etching
Future characterization methods
Many of these techniques have been perfected for silicon, making it the most studied semiconductor material. This is a result of silicon's affordability and prominent use in computing. As other fields such as power electronics, LED devices, and photovoltaics develop, characterization of a variety of alternative materials (including organic semiconductors) will continue to increase in importance. Many existing characterization methods will need to be adapted to accommodate the peculiarities of these new materials.
References
- Schroder, Dieter K. Semiconductor Material and Device Characterization. 3rd Ed. John Wiley and Sons, Inc. Hoboken, New Jersey, 2006.
- McGuire, Gary E. Characterization of Semiconductor Materials: Principles and Methods. Vol 1. Noyes Publications, Park Ridge, New Jersey, 1989.