Static induction transistor
In this article we will explore the topic of Static induction transistor from different perspectives, with the aim of analyzing its impact on modern society. From its origin to its influence today, we will take a tour of the most relevant aspects related to Static induction transistor. In addition, we will examine the possible implications and consequences that Static induction transistor may have in various areas, as well as the future perspectives that this topic raises. Through a detailed and exhaustive analysis, we will try to shed light on Static induction transistor and its relevance in the contemporary world.
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The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise.[1] It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical.[2] Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a vacuum tube triode and it was therefore used in high-end audio products, including power amplifiers from Sony in the second half of the 1970s and Yamaha from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28.[2]
Characteristics
A SIT has:
- short channel length
- low gate series resistance
- low gate-source capacitance
- small thermal resistance
- low noise
- low distortion
- high audio frequency power capability
- short turn-on and turn-off time, typically 0.25 μs
History
The SIT was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.[3]
See also
References
- ^ Nishizawa, Jun-ichi (December 15, 1974). "Field-effect transistor versus analog transistor (static induction transistor)". IEEE Transactions on Electron Devices. 22 (4): 185–197. doi:10.1109/T-ED.1975.18103. S2CID 37015648.
- ^ a b Pass, Nelson (2013). "The Sony VFET Amplifier 40 Year Commemorative" (PDF). First Watt. Retrieved August 17, 2022.
- ^ F. Patrick McCluskey; Thomas Podlesak; Richard Grzybowski, eds. (1996). High Temperature Electronics. CRC Press. p. 82. ISBN 0-8493-9623-9.
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